OPTICAL AND ELECTRICAL PROPERTIES OF ELECTROCHEMICALLY DOPED n- AND p-TYPE POLYTHIOPHENES.

被引:0
|
作者
Kaneto, Keiichi
Ura, Shogo
Yoshino, Katsumi
Inuishi, Yoshio
机构
来源
Japanese Journal of Applied Physics, Part 2: Letters | 1984年 / 23卷 / 03期
关键词
ELECTRIC PROPERTIES - OPTICAL PROPERTIES;
D O I
暂无
中图分类号
学科分类号
摘要
Absorption spectra have been measured on polythiophene films subjected to electrochemical Bu//4N** plus doping. The spectra show essentially the same evolution as those for BF//4** minus doping, i. e. , peaks at 0. 6 to about 0. 7 ev and 1. 5 to about 1. 8 ev appear upon doping in addition to the band-to-band absorption peak at 2. 6 ev. Propagation velocities of electrochemical doping of Bu//4N** plus and BF//4** minus along polythiophene films were estimated to be on the order of 10** minus **3 cm/sec.
引用
收藏
页码:189 / 191
相关论文
共 50 条
  • [1] OPTICAL AND ELECTRICAL-PROPERTIES OF ELECTROCHEMICALLY DOPED N-TYPE AND P-TYPE POLYTHIOPHENES
    KANETO, K
    URA, S
    YOSHINO, K
    INUISHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (03): : L189 - L191
  • [3] Electrical properties of n- and p-type doped epitaxial GaAs layers grown by OMVPE
    Modak, P
    Hudait, MK
    Hardikar, S
    Krupanidhi, SB
    PHYSICS OF SEMICONDUCTOR DEVICES, VOLS 1 AND 2, 1998, 3316 : 336 - 340
  • [4] Electrical and optical properties of doped p-type GaN superlattices
    Polyakov, A. Y.
    Smirnov, N. B.
    Govorkov, A. V.
    Dabiran, Amir M.
    Osinsky, A. V.
    Pearton, S. J.
    APPLIED PHYSICS LETTERS, 2006, 89 (11)
  • [5] OPTICAL AND MAGNETIC-PROPERTIES OF ELECTROCHEMICALLY DOPED P-TYPE AND N-TYPE POLY(3-HEXYLTHIOPHENE)
    ONODA, M
    MANDA, Y
    MORITA, S
    YOSHINO, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (07): : 2265 - 2271
  • [6] Electrical and optical properties of n-type and p-type ZnO
    Look, DC
    Claflin, B
    PROGRESS IN COMPOUND SEMICONDUCTOR MATERIALS IV-ELECTRONIC AND OPTOELECTRONIC APPLICATIONS, 2005, 829 : 351 - 359
  • [7] Optical properties of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures
    Cetinkaya, Caglar
    Cokduygulular, Erman
    Nutku, Ferhat
    Donmez, Omer
    Puustinen, Janne
    Hilska, Joonas
    Erol, Ayse
    Guina, Mircea
    JOURNAL OF ALLOYS AND COMPOUNDS, 2018, 739 : 987 - 996
  • [8] Optical properties of n- and p-type modulation doped GaAsBi/AlGaAs quantum well structures
    Nutku, Ferhat (fnutku@istanbul.edu.tr), 1600, Elsevier Ltd (739):
  • [9] Electrical and optical properties of n- and p-InSe doped with Sn and As
    Shigetomi, S
    Ikari, T
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (04) : 2301 - 2303
  • [10] Electrical and optical properties of p-type ZnSe:N grown by MOVPE
    Ogata, K
    Kera, T
    Kawaguchi, D
    Fujita, S
    Fujita, S
    BLUE LASER AND LIGHT EMITTING DIODES, 1996, : 176 - 179