共 50 条
- [41] WELL WIDTH DEPENDENCE OF THRESHOLD CURRENT-DENSITY IN TENSILE-STRAINED INGAAS/PNGAASP QUANTUM-WELL LASERS JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11): : 6199 - 6200
- [44] High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD OPTOELECTRONIC MATERIALS AND DEVICES, 1998, 3419 : 131 - 136
- [46] Weak antilocalization in a strained InGaAs/InP quantum well structure PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 22 (1-3): : 349 - 352
- [47] Tensile-strained InGaAsP-InP quantum-well laser with coupled disks emitting at 1.5μm 2012 ASIA COMMUNICATIONS AND PHOTONICS CONFERENCE (ACP), 2012,