Study on multiple quantum well of tensile-strained InGaAs/InP grown by LP-MOCVD

被引：0
|
作者：
Xiamen Univ, Xiamen, China [1 ]
机构：
来源：
Guti Dianzixue Yanjiu Yu Jinzhan | / 3卷 / 239-243期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [1] InGaAsP/InP strained layer quantum well materials grown by LP-MOCVD and their device applications
    Ma, Xiaoyu
    Wang, Shutang
    Xiong, Feike
    Guo, Liang
    Wang, ZHongming
    Zheng, Jing
    Wang, Liming
    Chen, Lianghui
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1996, 17 (05): : 396 - 400
  • [2] Effects of V/III ratio on InGaAs and InP grown at low temperature by LP-MOCVD
    Jiang, L
    Lin, T
    Wei, X
    Wang, GH
    Zhang, GZ
    Zhang, HB
    Ma, XY
    JOURNAL OF CRYSTAL GROWTH, 2004, 260 (1-2) : 23 - 27
  • [3] High performance 1.3 mu m and 1.55 mu m InGaAsP/InP strained layer quantum well lasers grown by LP-MOCVD
    Ma, XY
    Wang, ST
    Xiong, FK
    Guo, L
    Wang, ZM
    Wang, LM
    Zhang, XY
    Sun, GX
    Xia, CH
    Zhu, T
    Yang, YL
    Zhang, HQ
    He, GP
    Yao, SQ
    Bi, KK
    Chen, LH
    INTEGRATED OPTOELECTRONICS, 1996, 2891 : 34 - 39
  • [4] 高性能InP/InP、InGaAs/InP体材料LP-MOCVD生长
    刘宝林
    黄美纯
    陈松岩
    陈龙海
    陈朝
    王本忠
    赵方海
    刘式墉
    厦门大学学报(自然科学版), 1997, (04) : 52 - 56
  • [5] Tensile-strained GaAsN quantum dots on InP
    Pohjola, P.
    Hakkarainen, T.
    Koskenvaara, H.
    Sopanen, M.
    Lipsanen, H.
    Sainio, J.
    APPLIED PHYSICS LETTERS, 2007, 90 (17)
  • [6] Tensile-strained Ge/SiGe multiple quantum well microdisks
    Chen, Xiaochi
    Fenrich, Colleen S.
    Xue, Muyu
    Kao, Ming-Yen
    Zang, Kai
    Lu, Ching-Ying
    Fei, Edward T.
    Chen, Yusi
    Huo, Yijie
    Kamins, Theodore I.
    Harris, James S.
    PHOTONICS RESEARCH, 2017, 5 (06) : B7 - B14
  • [7] Polarization switching in a tensile-strained InGaAs/InGaAsP multiple quantum well distributed feedback laser diode
    Mizutani, N
    Miyazawa, S
    Nakanishi, M
    Majima, M
    Nitta, J
    Sekiguchi, Y
    Nojiri, H
    Handa, Y
    APPLIED PHYSICS LETTERS, 1998, 72 (24) : 3124 - 3126
  • [8] POLARIZATION-INDEPENDENT QUANTUM-CONFINED STARK-EFFECT IN AN INGAAS/INP TENSILE-STRAINED QUANTUM-WELL
    AIZAWA, T
    RAVIKUMAR, KG
    SUZAKI, S
    WATANABE, T
    YAMAUCHI, R
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 1994, 30 (02) : 585 - 592
  • [9] Recombination in tensile-strained In0.3Ga0.7As quantum well on InP
    Kalem, S
    Kuo, HC
    Curtis, A
    Stillman, G
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2000, 71 (02): : 153 - 155
  • [10] Recombination in tensile-strained In0.3Ga0.7As quantum well on InP
    Kalem, S.
    Kuo, H.-C.
    Curtis, A.
    Stillman, G.
    Applied Physics A: Materials Science and Processing, 2000, 71 (02): : 153 - 155
12345