Hot wall epitaxy grown n-PbTe(100)/p-Si(100) heterojunction

被引：0
|
作者：
Jilin Univ, Changchun, China [1 ]
机构：
来源：
J Cryst Growth | / 1-2卷 / 70-74期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
10
引用
收藏
相关论文
共 50 条
  • [1] Hot wall epitaxy grown n-PbTe(100)/p-Si(100) heterojunction
    Yang, YK
    Li, WM
    Lu, L
    Yang, Y
    Xu, LX
    Xiong, X
    Wang, SL
    Huang, HL
    JOURNAL OF CRYSTAL GROWTH, 1996, 165 (1-2) : 70 - 74
  • [2] Characteristics of HWE grown n-PbTe/P-Si heterojunction
    Yang, Yukun
    Li, Wenming
    Yu, Lei
    Yang, Yi
    Xu, Lixing
    Xiong, Xin
    Yang, Shanli
    Huang, Heying
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 1995, 16 (08): : 594 - 597
  • [3] STUDY ON N-PBTE/P-SI HETEROSTRUCTURES
    VAYA, PR
    MAJHI, J
    GOPALAM, BSV
    DATTATREYAN, C
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1986, 93 (01): : 353 - 360
  • [4] Rectifying characteristics and equivalent circuit of the epitaxial n-PbTe/p-Si heterojunction
    Farag, A. A. M.
    Ashery, A.
    Terra, F. S.
    Nasr, M.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2010, 12 (12): : 2413 - 2418
  • [5] Fabrication and characterization of n-ZnO nanorods/p-Si (100) heterojunction
    Kieu Loan Phan Thi
    Lam Thanh Nguyen
    Anh Tuan Dao
    Nguyen Huu Ke
    Vu Tuan Hung Le
    JOURNAL OF NONLINEAR OPTICAL PHYSICS & MATERIALS, 2015, 24 (04)
  • [6] Mechanism of the photocatalytic activity of p-Si(100)/n-ZnO nanorods heterojunction
    Nguyen Thi Hoa
    Vuong Van Cuong
    Nguyen Dinh Lam
    MATERIALS CHEMISTRY AND PHYSICS, 2018, 204 : 397 - 402
  • [7] Direct growth of CdTe(100) epilayers on Si(100) substrate by hot wall epitaxy
    Lalev, GM
    Wang, JF
    Lim, JW
    Abe, S
    Masumoto, K
    Isshiki, M
    APPLIED SURFACE SCIENCE, 2005, 242 (3-4) : 295 - 303
  • [8] Study of the band offset for ZnSe(100)/GaAs(100) heterojunctions grown by hot wall epitaxy
    Yang, Y
    Yang, Y
    Li, WC
    Li, WM
    Yu, L
    Xiong, X
    Wang, SL
    Huang, HL
    JOURNAL OF CRYSTAL GROWTH, 1996, 158 (04) : 455 - 458
  • [9] 热壁外延制备的n－PbTe／p－Si异质结特性研究
    杨玉琨，李文明，于磊，杨易，徐立兴，熊欣，王善力，黄和鸾
    半导体学报, 1995, (08) : 594 - 597
  • [10] Leakage current reduction in n-GaN/p-Si (100) heterojunction solar cells
    Saron, K. M. A.
    Ibrahim, M.
    Hashim, M. R.
    Taha, T. A.
    Elfadill, Nezar G.
    Mkawi, E. M.
    Allam, Nageh K.
    APPLIED PHYSICS LETTERS, 2021, 118 (02)
12345