PRODUCING SILICON CARBIDE FILMS AT LOW TEMPERATURE.

被引：0
作者：
Anon
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来源：
IBM technical disclosure bulletin | 1985年 / 28卷 / 01期
关键词：
ELECTRON TUBES; MAGNETRON; -; FILMS; Preparation; SPUTTERING;
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学科分类号：
摘要：
A process which is suitable for low temperature deposition of silicon carbide has been found. This technique is reactive magnetron sputtering of silicon in a gas mixture containing argon and methane (or other carbon-containing gas). A planar magnetron sputter rf source is used since it provides high rate sputtering with minimum substrate heating. This allows the films to be deposited for example in poly(methyl methacrylate) (PMMA) substrates without any adverse effect on such plastic substrates.
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