Different carrier temperatures in the wells and in the barriers of InGaAs/GaAs single quantum well structures

被引：0
|
作者：
Olin, U. [1 ]
Marcinkevicius, S. [1 ]
机构：
[1] Royal Inst of Technology and Inst of, Optical Research, Stockholm, Sweden
来源：
Semiconductor Science and Technology | 1994年 / 9卷 / 5 SUPPL期
关键词：
Electron scattering - Heating - Hot carriers - Semiconducting gallium arsenide - Semiconductor device structures - Solid state physics;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Optical carrier heating by quasi-cw excitation has been studied in an InGaAs/GaAs single quantum well structure. At lower excitation intensities until the quantum well is filled with the photoexcited carriers, the carrier temperature in the well is much higher than in the barriers by the hot carriers located in the well is barriers is discussed comparing the carrier-LO phonon and carrier-carrier scattering times.
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页码：756 / 758
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