600V trench IGBT in comparison with planar IGBT - an evaluation of the limit of IGBT performance -

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[1] Harada, M.
[2] Minato, T.
[3] Takahashi, H.
[4] Nishihara, H.
[5] Inoue, K.
[6] Takata, I.
来源：
Harada, M. | 1600年 / IEEE, Piscataway, NJ, United States卷
关键词：
Bipolar transistors;
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