Metal-insulator transition and magnetotransport in III-V compound diluted magnetic semiconductors

被引：0

作者：

Iye, Y. ^{[1
,2
]}

Oiwa, A. ^{[1
]}

Endo, A. ^{[1
]}

Katsumoto, S. ^{[1
,2
]}

Matsukura, F. ^{[3
]}

Shen, A. ^{[3
]}

Ohno, H. ^{[3
]}

Munekata, H. ^{[4
]}

机构：

[1] Institute for Solid State Physics, Univ. Tokyo, Roppongi, M., Tokyo, Japan

[2] Core Res. Evol. Sci. Technol. (C., Japan Corp. Sci. Technol., M., Tokyo, Japan

[3] Res. Inst. for Elec. Communication, Tohoku Univ., Katahira, A., Sendai, Japan

[4] Imaging Sci. and Eng. Laboratory, Tokyo Inst. Technol., Nagatsuda, M., Yokohama, Japan

来源：

Materials Science and Engineering B: Solid-State Materials for Advanced Technology | 1999年 / 63卷 / 01期

关键词：

Number:; -; Acronym:; MEXT; Sponsor: Ministry of Education; Culture; Sports; Science and Technology;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：88 / 95

共 10 条

[1] Heteroepitaxial growth of III-V compound semiconductors for optoelectronic devices
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[2] Low-temperature conduction and giant negative magnetoresistance in III-V-based diluted magnetic semiconductor: (Ga, Mn)As/GaAs
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[8] Fabrication and characterization of III-V compound semiconductor Bragg-Fresnel lenses for hard x-ray microfocusing
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[9] Electronic Band Structures of the Highly Desirable III-V Semiconductors: TB-mBJ DFT Studies
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[10] Experimental studies of colossal magnetoresistance manganites: Effects of oxygen non-stoichiometry, 55Mn nuclear magnetic resonance, slow relaxation near the metal-insulator phase transition
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