INFLUENCE OF HYDROSTATIC PRESSURE ON RAMAN SPECTRA OF epsilon -GaSe AND ZnIn2S4 SINGLE CRYSTALS.

被引:0
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作者
Vinogradov, E.A.
Zhizhin, G.N.
Mel'nik, N.N.
Subbotin, S.I.
Panifilov, V.V.
Allakhverdiev, K.R.
Babaev, S.S.
Zhitar, V.F.
机构
来源
Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela) | 1980年 / 22卷 / 03期
关键词
SEMICONDUCTING ZINC COMPOUNDS - Pressure Effects;
D O I
暂无
中图分类号
TM2 [电工材料]; TN [电子技术、通信技术];
学科分类号
0805 ; 080502 ; 080801 ; 0809 ;
摘要
An investigation was made of the influence of hydrostatic pressures on the Raman spectra of epsilon -GaSe (up to 8. 5 kbar) and of ZnIn//2S//4 (up to 10. 9 kbar) at 295 degree K. The values of the parameter gamma //i equals (1/ nu //i)(d nu //i/dP) were determined for both single crystals, and in the case of epsilon -GaSe the mode Gruneisen parameters GAMMA //i were also found. The set of the parameters gamma //i( GAMMA //i) indicated that both crystals had a layer structure with a mixed ionic-covalent binding within the layers. The parameters gamma //i were used to find the number of vibrations in ZnIn//2S//4 (by analogy with epsilon -GaSe) belonging to the ″rigid layer″ type (i. e. , interlayer vibrations). The results showed that ZnIn//2S//4, like epsilon -GaSe, was most likely a two-layer polytype.
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页码:434 / 437
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