Near-surface electrical effects of oxidation and hydrogenation in silicon

被引：0
|
作者：
Delidais, I. [1 ]
Ballutaud, D. [1 ]
Boutry-Forveille, A. [1 ]
Maurice, J.-L. [1 ]
Aucouturier, M. [1 ]
Leroy, B. [1 ]
机构：
[1] CNRS-Bellevue, France
来源：
Materials science and engineering | 1989年 / B4卷 / 1-4期
关键词：
11;
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页码：277 / 280
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