BEHAVIOR OF GERMANIUM IN EPITAXIAL GaP:Ge AND GaP:Ge:Cr FILMS.

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Putilovskaya, M.Yu.
Samorukov, B.E.
Slobodchikov, S.V.
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Soviet physics. Semiconductors | 1981年 / 15卷 / 02期
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A study was made of the electrical properties and photoluminescence of gallium phosphide films grown by liquid epitaxy and doped either with germanium or with germanium and chromium. Chromium was introduced in order to compensate shallow donors. At low concentrations the germanium impurity acted as an acceptor. A downward shift of the Fermi level, which occured on introduction of chromium, enhanced the donor role of germanium. It was found that germanium-germanium pairs formed at high concentrations of this impurity. The behavior of germanium in the films was explained qualitatively by a quasichemical model.
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页码：203 / 204
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