共 50 条
- [31] The effect of germanium doping on oxygen donors in Czochralski-grown siliconJOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (32) : 5745 - 5750Hong, LYang, DRYu, XGMa, XYTian, DXLi, LBQue, DL
- [32] EFFECT OF OXIDE PRECIPITATES ON MINORITY-CARRIER LIFETIME IN CZOCHRALSKI-GROWN SILICONAPPLIED PHYSICS LETTERS, 1982, 40 (08) : 719 - 721MIYAGI, MWADA, KOSAKA, JINOUE, N
- [33] REDISSOLUTION OF PRECIPITATED OXYGEN IN CZOCHRALSKI-GROWN SILICON-WAFERSAPPLIED PHYSICS LETTERS, 1981, 39 (12) : 987 - 989SHIMURA, F
- [34] Distribution of SiO2 precipitates in large, oxygen rich Czochralski-grown silicon single crystals after annealing at 750 °C 1600, American Inst of Physics, Woodbury, NY, USA (77):
- [35] SMALL-ANGLE NEUTRON-SCATTERING FROM OXYGEN PRECIPITATES IN CZOCHRALSKI-GROWN SILICON-CRYSTALSJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (01): : 106 - 111TAKEDA, TKOMURA, SOHSAWA, AHONDA, K
- [36] THE EFFECT OF THERMAL HISTORY DURING CRYSTAL-GROWTH ON OXYGEN PRECIPITATION IN CZOCHRALSKI-GROWN SILICONSEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (03) : 406 - 413PUZANOV, NIEIDENZON, AM
- [37] Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal siliconJournal of the Korean Physical Society, 2014, 65 : 362 - 367Yu Jin JungW. K. KimJae Hak Jung
- [38] Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal siliconJOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2014, 65 (03) : 362 - 367Jung, YuJinKim, W. K.Jung, Jae Hak
- [40] Czochralski-Grown Silicon Crystals for MicroelectronicsACTA PHYSICA POLONICA A, 2013, 124 (02) : 235 - 238Bukowski, A.
