Generation-recombination noise in doped-channel Al0.3Ga 0.7As/GaAs/In0.2Ga0.8As quantum well micro-Hall devices

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[1] Kunets, V.P.

[2] Müller, U.

[3] Dobbert, J.

[4] Pomraenke, R.

[5] Tarasov, G.G.

[6] Masselink, W.T.

[7] Kostial, H.

[8] Kissel, H.

[9] Mazur, Yu.I.

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Masselink, W.T. (massel@physik.hu-berlin.de) | 1600年 / American Institute of Physics Inc.卷 / 94期

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