Physical properties of chemically deposited CdS films for solar cells

CdS semiconductor films prepared by chemical-solution growth have been studied. The technique offers the possibility for better control over the preparation processes, because of the slower rate of deposition. Effect of pH value of the solution and its temperature have been correlated. The crystalline structure of the CdS film on glass substrate was wurtzite highly oriented with small amount of cubic phase. The band gap of the film has been estimated from the optical absorption studies under different growth conditions.