XPS STUDY OF THE PASSIVATING OXIDE LAYER PRODUCED ON GaAs (001) SUBSTRATE BY HEATING IN AIR ABOVE 200 degree C.

被引：0

作者：

Contour, J.P. ^{[1
]}

Massies, J. ^{[1
]}

Fronius, H. ^{[1
]}

Ploog, K. ^{[1
]}

机构：

[1] CNRS, Valbonne, Fr, CNRS, Valbonne, Fr

来源：

Japanese Journal of Applied Physics, Part 2: Letters | 1988年 / 27卷 / 02期

关键词：

SEMICONDUCTING GALLIUM ARSENIDE - SPECTROSCOPY; ELECTRON; -; SUBSTRATES;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The passivating oxide layer resulting from a high-temperature (250 degree C in air) GaAs substrate preparation procedure has been analysed by X-ray photoelectron spectroscopy. It is shown that the protective film obtained from heating a semi-insulating substrate in clean air to 250 degree C is mainly gallium oxide whereas it is an arsenic-rich mixture of As and Ga oxides after the standard preparation procedure. At this temperature, the oxidation steady-state conditions are reached after 5 minutes of heating. The higher the passivating temperature, the lower the arsenic content of the oxide layer.

引用

页码：167 / 169