Micro-Raman and ion channeling study of crystal damage in Si induced by focused Co ion beam implantation

被引：0
|
作者：
Inst. Ionenstrahlphysik M., Forschungszentrum Rossendorf e.V., P.O. Box 510119, 01314 Dresden, Germany [1 ]
不详 [2 ]
机构：
来源：
Applied Physics A: Materials Science and Processing | 2000年 / 71卷 / 02期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
33
引用
收藏
页码：175 / 180
相关论文
共 50 条
  • [41] Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopy and ion channeling
    Desnica, UV
    DesnicaFrankovic, ID
    Ivanda, M
    Furic, K
    Haynes, TE
    PHYSICAL REVIEW B, 1997, 55 (24) : 16205 - 16216
  • [42] Morphology of the implantation-induced disorder in GaAs studied by Raman spectroscopy and ion channeling
    Desnica, U. V.
    Desnica-Frankovic, I. D.
    Ivanda, M.
    Furic, K.
    1997, (55):
  • [43] INFLUENCE OF CHANNELING EFFECTS ON ION DISTRIBUTION AND DAMAGE PROFILES DURING HIGH-ENERGY ION-IMPLANTATION IN SI
    CARNERA, A
    GASPAROTTO, A
    BERTI, M
    FABBRI, R
    MIKROCHIMICA ACTA, 1994, 114 : 205 - 211
  • [44] A CHANNELING STUDY OF ION-IMPLANTATION DAMAGE IN UO2 AND UN
    MATZKE, H
    TUROS, A
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1990, 46 (1-4) : 117 - 121
  • [45] Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs
    Barba, D.
    Aimez, V.
    Beauvais, J.
    Beerens, J.
    Drouin, D.
    Chicoine, M.
    Schiettekatte, F.
    Journal of Applied Physics, 2004, 96 (09): : 4890 - 4893
  • [46] RBS-channeling studies on damage production by MeV ion implantation in Si(111) wafers
    Cheang-Wong, JC
    Crespo-Sosa, A
    Oliver, A
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 84 (03): : 205 - 210
  • [47] Raman study of As outgassing and damage induced by ion implantation in Zn-doped GaAs
    Barba, D
    Aimez, V
    Beauvais, J
    Beerens, J
    Drouin, D
    Chicoine, M
    Schiettekatte, F
    JOURNAL OF APPLIED PHYSICS, 2004, 96 (09) : 4890 - 4893
  • [48] Ion beam damage assessment and waveguide formation induced by energetic Si-ion irradiation in lanthanum aluminate crystal
    Liu, Y.
    Huang, Q.
    Crespillo, M. L.
    Qiao, M.
    Liu, P.
    Wang, X. L.
    OPTICAL MATERIALS, 2017, 64 : 391 - 400
  • [49] Ion beam induced mixing at Co/Si interface
    Agarwal, Garima
    Sharma, Pratibha
    Jain, Ankur
    Lal, Chhagan
    Kabiraj, D.
    Jain, I. P.
    VACUUM, 2008, 83 (02) : 397 - 400
  • [50] GaAs micro crystal growth on a As-terminated Si (001) surface by low energy focused ion beam
    Chikyow, T
    Koguchi, N
    MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS-1998, 1999, 536 : 445 - 450
12345