Strained layer Inx Ga1-x As/GaAs and InxGa1-x As/InyGA1-y P multiple-quantum-well optical modulators grown by gas-source MBE

被引：0

作者：

Kim, J.W. ^{[1
]}

Chen, C.W. ^{[1
]}

Vogt, T.J. ^{[1
]}

Woods, L.M. ^{[1
]}

Robinson, G.Y. ^{[1
]}

Lile, D.L. ^{[1
]}

机构：

[1] Colorado State Univ, Fort Collins, United States

来源：

IEEE Photonics Technology Letters | 1993年 / 5卷 / 09期

关键词：

Crystal growth - Molecular beam epitaxy - Quantum electronics - Semiconducting gallium compounds - Semiconductor quantum wells;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The first results on low-power p-i-n diode modulator structures using strained multiple quantum wells (MQW's) of InGaAs/InGaP grown by gas-source molecular beam epitaxy (MBE) on GaAS are presented. A comparison of transmission, reflection, and photocurrent spectra for these nonresonant devices with those fabricated from InGaAs/GaAs indicates larger modulation, with a maximum change in reflection of > 42% observed at 5-V bias at a wavelength of 0.96 μm.

引用

页码：967 / 989