共 50 条
- [11] Deep reactive ion etching of silicon using an aluminum etching maskASDAM '02, CONFERENCE PROCEEDINGS, 2002, : 31 - 34Wang, WCHo, JNReinhall, P
- [12] Tailoring etch directionality in a deep reactive ion etching toolJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03): : 1412 - 1416Ayón, AANagle, SFréchette, LEpstein, ASchmidt, MA
- [13] Characteristics of etch rate uniformity in aluminum reactive ion etching Tsukada, Tsutomu, 1600, (30):
- [14] CHARACTERISTICS OF ETCH RATE UNIFORMITY IN ALUMINUM REACTIVE ION ETCHINGJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (11A): : 2956 - 2964TSUKADA, T
- [15] ETCH RATE UNIFORMITY ASPECTS IN ALUMINUM REACTIVE ION ETCHINGJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C309 - C309TSUKADA, TWANI, E
- [16] Etch rate optimization in reactive ion etching of epoxy photoresistsPROCEEDINGS OF THE EUROSENSORS XXIII CONFERENCE, 2009, 1 (01): : 796 - 799Driesen, M.Wouters, K.Puers, R.
- [17] Reduction of isotropic etch for silicon nanowires created by metal assisted deep reactive ion etchingINTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 2018, 15 (1-3) : 93 - 107Tung Thanh BuiChien Mau Dang
- [18] PREDICTION OF NEW ETCH FRONTS IN BLACK SILICON PRODUCED BY CRYOGENIC DEEP REACTIVE ION ETCHING2015 TRANSDUCERS - 2015 18TH INTERNATIONAL CONFERENCE ON SOLID-STATE SENSORS, ACTUATORS AND MICROSYSTEMS (TRANSDUCERS), 2015, : 588 - 591Abi-Saab, D.Basset, P.Pierotti, M. J.Trawick, M. L.Angelescu, D. E.
- [19] DEEP SILICON TRENCH FORMATION BY REACTIVE ION ETCHINGJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C450 - C450CHANG, HRKRETCHMER, JWFANELLI, GMCHOW, TPBLACK, RDKORMAN, CS
- [20] FORMATION OF DEEP HOLES IN SILICON BY REACTIVE ION ETCHINGJOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (02): : 594 - 600HIROBE, KKAWAMURA, KNOJIRI, K