Selection of front-end element for low-noise bipolar transistor amplifier

被引：0
|
作者：
Krasnokutskii, R.N. [1 ]
Kurchaninov, L.L. [1 ]
Tikhonov, V.V. [1 ]
Fedyakin, N.N. [1 ]
Shuvalov, R.S. [1 ]
机构：
[1] Inst of High-Energy Physics, Russia
来源：
Instruments and experimental techniques New York | 1988年 / 31卷 / 3 pt 2期
关键词：
Compendex;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Amplifiers - Noise, Spurious Signal - Electric Measurements - Charge - Noise, Spurious Signal - Mathematical Models - Particle Detectors - Reliability
引用
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页码：671 / 676
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