Picosecond carrier lifetime in InGaAsP grown by He plasma-assisted molecular beam epitaxy

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作者：
Benjamin, S.D. [1 ]
Quan, Li [1 ]
Ehrlich, J.E. [1 ]
Smith, P.W.E. [1 ]
Robinson, B.J. [1 ]
Thompson, D.A. [1 ]
机构：
[1] Univ of Toronto, Toronto, Canada
来源：
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS | 1996年
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