Selective Si and SiGe epitaxial heterostructures grown using an industrial low-pressure chemical vapor deposition module

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J Vac Sci Technol B | / 3卷 / 712期

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[31] PHOTOLUMINESCENCE AND ELECTRICAL CHARACTERIZATION OF SIGE/SI HETEROSTRUCTURES GROWN BY RAPID THERMAL CHEMICAL VAPOR-DEPOSITION
BREMOND, G
SOUIFI, A
BENYATTOU, T
DUTARTRE, D
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[32] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF COPPER AND PLATINUM
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[33] EPITAXIAL-GROWTH OF 3C-SIC ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
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SAKUMA, E
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ENDO, K
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[34] EPITAXIAL AL2O3 FILMS ON SI BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
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[36] SELECTIVE LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TUNGSTEN ON SI/SIO2 SUBSTRATES
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KATO, E
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[37] High quality epitaxial Si grown by a simple low pressure chemical vapor deposition at 550 degrees C
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[38] IN0.49GA0.51P/GAAS HETEROSTRUCTURES GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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[39] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION
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[40] HEAVILY SI-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLARSINE AND SILANE
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