Crystal defects in vertical cavity epitaxial structures on GaAs investigated by X-ray methods

被引：0
|
作者：
Jenichen, Bernd [1 ]
Hey, Rudolf [1 ]
Westphal, Sven [1 ]
Kaganer, Vladimir [1 ]
Koehler, Rolf [1 ]
机构：
[1] Paul-Drude-Inst fuer, Festkoerperelektronik, Berlin, Germany
来源：
Materials science & engineering. B, Solid-state materials for advanced technology | 1994年 / B28卷 / 1-3期
关键词：
Semiconductor device structures;
D O I：
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学科分类号：
摘要：
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页码：520 / 522
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