Linear trapping model of polysilicon grain-boundary

被引：0

作者：

Zhao, Jie ^{[1
]}

Zhang, Ankang ^{[1
]}

Wei, Tongli ^{[1
]}

机构：

[1] Southeast Univ, Nanjing, China

来源：

Guti Dianzixue Yanjiu Yu Jinzhan/Research and Progress of Solid State Electronics | 1996年 / 16卷 / 04期

关键词：

Activation energy - Calculations - Deep level transient spectroscopy - Electric properties - Grain boundaries - Iterative methods - Mathematical models - Semiconductor doping - Spectroscopic analysis;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

In this paper, the deep level transient spectrums of polysilicon n-p diode depletion region have been measured by use of DLTS instrument. According to the DLTS experimental results, the uniform trapping model set by G. Baccarina etc. has been modified and the linear trapping model of the grain-boundary has been proposed. Using the modified model, the relationship between the polysilicon electrical parameters, barrier height Eb as well as activation energy Ea, and the dopping level NG can be solved iteratively. The calculation results show that the linear trapping model of the grain-boundary is possessed of theoretical reasonableness.

引用

页码：336 / 343