NOVEL DIELECTRIC/SILICON PLANAR STRUCTURES FORMED BY ION BEAM SYNTHESIS.

被引：0

作者：

Hemment, P.L.F. ^{[1
]}

Reeson, K.J. ^{[1
]}

Kilner, J.A. ^{[1
]}

Chater, R.J. ^{[1
]}

Marsh, C. ^{[1
]}

Booker, G.R. ^{[1
]}

Davis, J.R. ^{[1
]}

Celler, G.K. ^{[1
]}

机构：

[1] Univ of Surrey, Guildford, Engl, Univ of Surrey, Guildford, Engl

来源：

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms | 1986年 / B21卷 / 2-4期

关键词：

SEMICONDUCTING SILICON;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

Multilayer SiO//2/Si planar structures with abrupt interfaces have been formed in single crystal silicon by ion beam synthesis, using multiple energy implants and high temperature annealing. SIMS, RBS and cross-section TEM techniques have been used to follow the evolution of these structures. Provided an implantation sequence from high to low energy is followed, the synthesized buried SiO//2 layers do not interact during the implantation, and the Si and SiO//2 thicknesses are independently defined by the ion energy and dose, respectively. The formation, during high temperature annealing, of planar structures with abrupt interfaces is driven by chemical forces which cause the excess oxygen in the supersaturated silicon matrix to segregate at the peaks of the oxygen concentration profiles. The mechanism is qualitatively similar to diffusion controlled precipitate growth in bulk silicon.

引用

页码：129 / 133