Growth and characterization of AlGaAs/GaAs heterojunction bipolar transistor on GaAs (111)B substrate by molecular beam epitaxy

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Natl Taiwan Univ, Taipei, Taiwan ^{[1
]}

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来源：

Solid State Electron | / 8卷 / 1127-1132期

关键词：

Epitaxial growth - Leakage currents - Molecular beam epitaxy - Morphology - Multilayers - Semiconducting aluminum compounds - Semiconducting gallium arsenide - Semiconductor device manufacture - Semiconductor growth - Substrates - Surface properties - Temperature control;

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摘要：

The growth and fabrication of AlGaAs/GaAs heterojunction bipolar transistors (HBTs) on GaAs (111)B substrate was studied. The surface morphology of (111)B GaAs epilayers strongly depends on the substrate misorientation and substrate temperature. There is only a very narrow window of substrate temperature for the (111)B GaAs growth. It is found that the base leakage current in the low current region can be suppressed by using 2°-off substrates, a precise control of substrate temperature and As/Ga BEP ratio. Additionally, because of the different surface properties along the (111)B direction, the surface recombination current of HBT on (111)B 2° off substrates is smaller than that on (100) GaAs at a growth temperature of 590°C.

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