VALENCE BAND DENSITY OF STATES OF 74As + IMPLANTED AMORPHOUS GERMANIUM.

被引：0
|
作者：
Peto, G. [1 ]
Kanski, J. [1 ]
机构：
[1] Central Research Inst for Physics, Budapest, Hung, Central Research Inst for Physics, Budapest, Hung
来源：
Journal of Non-Crystalline Solids | 1986年 / 90卷 / 1-3期
关键词：
ARSENIC - BAND STRUCTURE - SEMICONDUCTOR MATERIALS - Amorphous;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Density of states of a-Ge induced by **7**4As** plus implantation was measured by means of the photoelectron energy distribution. The result is a very structureless curve. The density of states is very low at 0-5 eV, but larger at 5-9 eV energy regions of the valence band. These data indicate that the As implanted a-Ge is an amorphous state of Ge having distorted tetrahedral coordination.
引用
收藏
页码：131 / 134
相关论文
共 50 条
  • [1] VALENCE BAND DENSITY OF STATES OF AS-74+ IMPLANTED AMORPHOUS-GERMANIUM
    PETO, G
    KANSKI, J
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 90 (1-3) : 131 - 134
  • [2] DENSITY OF STATES NEAR THE BAND EDGES IN AMORPHOUS-GERMANIUM
    TONG, BY
    PANT, MM
    LEUNG, KV
    CANADIAN JOURNAL OF PHYSICS, 1981, 59 (06) : 775 - 780
  • [3] PHOTOEMISSION INVESTIGATION OF VALENCE BAND DENSITY OF STATES IN AMORPHOUS SE
    NIELSEN, P
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1972, 17 (03): : 323 - &
  • [4] DENSITY OF STATES IN THE VALENCE BAND TAIL AND PHOTOCONDUCTIVITY OF HYDROGENATED AMORPHOUS-SILICON
    GOLIKOVA, OA
    DOMASHEVSKAYA, EP
    MEZDROGINA, MM
    SOROKINA, KL
    TEREKHOV, VA
    TROSTYANSKII, SN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (08): : 872 - 873
  • [5] NEW INTERPRETATION OF VALENCE BAND DENSITY OF STATES OF AMORPHOUS GROUP 4 SEMICONDUCTORS
    TREUSCH, J
    KRAMER, B
    SOLID STATE COMMUNICATIONS, 1974, 14 (02) : 169 - 171
  • [6] INFLUENCE OF ELECTRON TRANSITIONS IN THE VALENCE BAND ON THE RESONANCE ABSORPTION OF ELECTRON-HOLE DROPLETS IN GERMANIUM.
    Murzin, V.N.
    Zayats, V.A.
    Kononenko, V.L.
    Soviet Physics, Solid State (English translation of Fizika Tverdogo Tela), 1975, 17 (09): : 1783 - 1787
  • [7] Valence band structure of amorphous germanium-nitrogen alloys
    Comedi, D
    Zanatta, AR
    Chambouleyron, I
    Alvarez, F
    SURFACES, VACUUM, AND THEIR APPLICATIONS, 1996, (378): : 310 - 314
  • [8] VALENCE BAND DENSITY OF STATES IN AMORPHOUS-SILICON DEDUCED FROM SPD ORBITALS
    GRIGOROVICI, R
    GARTNER, P
    CORCOTOI, I
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1989, 114 : 256 - 258
  • [9] BAND TAILS AND DEEP-DEFECT DENSITY OF STATES IN HYDROGENATED AMORPHOUS-GERMANIUM
    GODET, C
    BOUIZEM, Y
    CHAHED, L
    ELZAWAWI, I
    THEYE, ML
    MEAUDRE, M
    MEAUDRE, R
    BASROUR, S
    BRUYERE, JC
    PHYSICAL REVIEW B, 1991, 44 (11): : 5506 - 5509
  • [10] DENSITY OF STATES IN CRYSTALLINE AND AMORPHOUS-GERMANIUM
    TONG, BY
    SWENSON, JR
    CHOO, FC
    PHYSICAL REVIEW B, 1974, 10 (08): : 3338 - 3341
12345