共 50 条
- [1] Electron microscopy study of surfactant-mediated solid phase epitaxy of Ge on Si(111) JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (5A): : 2460 - 2467
- [5] SURFACTANT-MEDIATED EPITAXY OF GE ON SI(111) - THE ROLE OF KINETICS AND CHARACTERIZATION OF THE GE LAYERS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04): : 1932 - 1937
- [7] In situ TEM observations of surfactant-mediated epitaxy: growth of Ge on an Si(111) surface mediated by In Surface Science, 1996, 357-358 (1-3): : 418 - 421