Effect of thermal treatment of undoped Bi4Ti3O12 thin films prepared by metalorganic chemical vapor deposition

被引:0
作者
机构
[1] Nakamura, Makoto
[2] Higuchi, Tohru
[3] Tsukamoto, Takeyo
来源
Nakamura, M. (j1202636@ed.kagu.tus.ac.jp) | 1600年 / Japan Society of Applied Physics卷 / 42期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
[41]   Atomic layer deposition of ferroelectric bismuth titanate Bi4Ti3O12 thin films [J].
Vehkamaeki, Marko ;
Hatanpaeae, Timo ;
Kemell, Marianna ;
Ritala, Mikko ;
Leskelae, Markku .
CHEMISTRY OF MATERIALS, 2006, 18 (16) :3883-3888
[42]   Preparation of Bi4Ti3O12 thin films by pulsed laser deposition at room temperature [J].
Zeng, Jianming ;
Zhang, Miao ;
Gao, Jianxia ;
Zheng, Lirong ;
Wang, Lianwei ;
Lin, Chenglu ;
Pignolet, A. ;
Curran, C. ;
Hesse, D. .
Yadian Yu Shengguang/Piezoelectrics and Acoustooptics, 1999, 21 (02) :131-135
[43]   Effect of cosubstitution of La and V in Bi4Ti3O12 thin films on the low-temperature deposition [J].
Watanabe, T ;
Funakubo, H ;
Osada, M ;
Noguchi, Y ;
Miyayama, M .
APPLIED PHYSICS LETTERS, 2002, 80 (01) :100-102
[44]   Pulsed laser deposition of Bi4Ti3O12 thin films and their anomalous imprint characteristics [J].
Park, BH ;
Noh, TW ;
Lee, J ;
Kim, CY ;
Jo, W .
INTEGRATED FERROELECTRICS, 1997, 14 (1-4) :181-191
[45]   Thin CdS films prepared by metalorganic chemical vapor deposition [J].
Uda, H ;
Yonezawa, H ;
Ohtsubo, Y ;
Kosaka, M ;
Sonomura, H .
SOLAR ENERGY MATERIALS AND SOLAR CELLS, 2003, 75 (1-2) :219-226
[46]   Electrical properties of Nd-substituted Bi4Ti3O12 thin films fabricated by chemical solution deposition [J].
Zhong, XL ;
Wang, JB ;
Zhou, YC ;
Liu, JJ ;
Zheng, XJ .
JOURNAL OF CRYSTAL GROWTH, 2005, 277 (1-4) :233-237
[47]   Microstructure and properties of ferroelectric Bi4Ti3O12 thin films [J].
Jiang, B ;
Peng, JL ;
Bursill, LA .
MODERN PHYSICS LETTERS B, 1999, 13 (26) :933-945
[48]   Properties of Nd-doped Bi4Ti3O12 thin films grown by metalorganic solution decomposition [J].
Yang, CH ;
Wang, Z ;
Zhai, JP ;
Ma, GP ;
Sun, XQ ;
Yi, XJ ;
Han, JR .
JOURNAL OF CRYSTAL GROWTH, 2004, 264 (1-3) :312-315
[49]   Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition [J].
Dept. Electron. Eng. Mat. Sci., Technology Research Center, Chinese University of Hong Kong, Shatin, N.T., Hong Kong .
Appl Phys Lett, 24 (3711-3713)
[50]   Effects of a Bi4Ti3O12 buffer layer on SrBi2Ta2O9 thin films prepared by the metalorganic decomposition [J].
Hu, GD ;
Xu, JB ;
Wilson, IH ;
Cheung, WY ;
Ke, N ;
Wong, SP .
APPLIED PHYSICS LETTERS, 1999, 74 (24) :3711-3713