Triple-well resonant tunneling diode for multiple-valued logic application.

被引：0

作者：

Tanoue, T. ^{[1
]}

Mizuta, H. ^{[1
]}

Takahashi, S. ^{[1
]}

机构：

[1] Hitachi Ltd, Tokyo, Jpn

来源：

Electron device letters | 1988年 / 9卷 / 08期

关键词：

COMPUTER METATHEORY -- Many Valued Logics - LOGIC CIRCUITS -- Components;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A resonant tunneling diode with four potential barriers and three quantum wells was fabricated and applied to multiple-valued logic. The diode exhibited significant double negative resistance characteristics and operated as a triply stable device with a single voltage between 180 and 230 K.

引用

页码：365 / 367

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