Determination of interface trap capture cross sections using three-level charge pumping

被引：0

作者：

Saks, Nelson S. ^{[1
]}

Ancona, Mario G. ^{[1
]}

机构：

[1] US Naval Research Lab, Washington,, DC, USA

来源：

Electron device letters | 1990年 / 11卷 / 08期

关键词：

Electric Measurements - Charge - Transistors; Field Effect;

D O I：

暂无

中图分类号：

TN [电子技术、通信技术];

学科分类号：

0809 ;

摘要：

A modified three-voltage-level charge pumping (CP) technique is described for measuring interface trap parameters in MOSFETs. Charge pumping (CP) is a technique for studying traps at the Si-SiO2 interface in MOS transistors. In the CP technique, a pulse is applied to the gate of the MOSFET which alternately fills the traps with electrons and holes, thereby causing a recombination current Icp to flow in the substrate. With this technique, interface trap capture cross sections for both electrons and holes may be determined as a function of trap energy in a single device. It is demonstrated that a modified three-level charge pumping method may be used to determine not only interface trap densities but also to capture cross sections as a function of trap energy. The trap parameters are obtained for both electrons and holes using a single MOSFET.

引用

页码：339 / 341