HOPPING-CONDUCTION INVESTIGATION OF THE INFLUENCE OF IRRADIATION WITH 60Co gamma RAYS AND OF ANNEALING OF RADIATION DEFECTS IN n-TYPE GERMANIUM.

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Dobrego, V.P.
Ermolaev, O.P.
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| 1977年 / 11卷 / 10期
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The influence of high gamma -ray doses and of annealing of radiation defects in antimony-doped germanium was investigated in the 1. 8-300 degree K range by measuring the electrical properties. The experimental results were analyzed using the theory of hopping conduction and percolation. It was concluded that bombardment of n-type germanium with gamma rays reduced the concentration of the donor states associated with group V atoms and compensated chemical donors by acceptors which appeared in the forbidden band of Ge.
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页码：1111 / 1113
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