HOPPING-CONDUCTION INVESTIGATION OF THE INFLUENCE OF IRRADIATION WITH 60Co gamma RAYS AND OF ANNEALING OF RADIATION DEFECTS IN n-TYPE GERMANIUM.

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作者：

Dobrego, V.P.

Ermolaev, O.P.

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| 1977年 / 11卷 / 10期

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摘要：

The influence of high gamma -ray doses and of annealing of radiation defects in antimony-doped germanium was investigated in the 1. 8-300 degree K range by measuring the electrical properties. The experimental results were analyzed using the theory of hopping conduction and percolation. It was concluded that bombardment of n-type germanium with gamma rays reduced the concentration of the donor states associated with group V atoms and compensated chemical donors by acceptors which appeared in the forbidden band of Ge.

引用

页码：1111 / 1113

共 41 条

[1] HOPPING-CONDUCTION INVESTIGATION OF INFLUENCE OF FAST-NEUTRON IRRADIATION AND ANNEALING OF RADIATION DEFECTS IN N-TYPE GERMANIUM
DOBREGO, VP
ERMOLAEV, OP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1138 - 1141
[2] INFLUENCE OF IRRADIATION WITH 60Co gamma RAYS ON THE STATE OF Ni AND Ag IMPURITIES IN GERMANIUM.
Golubev, N.F.
Latyshev, A.V.
Soviet physics. Semiconductors, 1980, 14 (02): : 191 - 193
[3] HOPPING CONDUCTIVITY OF N-TYPE GERMANIUM IRRADIATED WITH CO-60 GAMMA-RAYS
DOBREGO, VP
ERMOLAEV, OP
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 606 - 607
[4] HIGH TEMPERATURE ANNEALING OF GAMMA-RADIATION DEFECTS IN N-TYPE GERMANIUM
VITOVSKII, NA
MASHOVETS, TV
RYVKIN, SM
SOVIET PHYSICS-SOLID STATE, 1964, 6 (06): : 1481 - 1488
[5] RECOMBINATION AND TRAPPING IN 60CO GAMMA-IRRADIATED N-TYPE GERMANIUM
STREETMAN, BG
JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3145 - +
[6] ANNEALING OF IRRADIATION DEFECTS IN LIGHTLY DOPED N-TYPE GERMANIUM
MEESE, JM
MACKAY, JW
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (06): : 848 - &
[7] INTRODUCTION AND ANNEALING OF DEFECTS IN N-TYPE GAAS FOLLOWING IRRADIATION WITH ELECTRONS AND GAMMA-RAYS
KOLCHENKO, TI
LOMAKO, VM
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (1-2): : 67 - 72
[8] CAPACITANCE SPECTROSCOPY OF GAMMA-RADIATION DEFECTS IN N-TYPE GERMANIUM
KOMAROV, BA
LATYSHEV, AV
TKACHEV, VD
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (03): : 322 - 324
[9] 60Co gamma-irradiation-induced defects in n-GaN
Umana-Membreno, GA
Dell, JM
Hessler, TP
Nener, BD
Parish, G
Faraone, L
Mishra, UK
APPLIED PHYSICS LETTERS, 2002, 80 (23) : 4354 - 4356
[10] RADIATION DEFECTS CREATED BY CO60 GAMMA-RAYS IN P- AND N-TYPE SI OF HIGH PURITY
KONOZENK.ID
SEMENYUK, AK
KHIVRICH, VI
PHYSICA STATUS SOLIDI, 1969, 35 (02): : 1043 - &

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