Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures

被引:0
|
作者
Department of Physics, Linköping University, Sweden [1 ]
不详 [2 ]
不详 [3 ]
机构
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] Radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
    Monemar, B
    Bergman, JP
    Dalfors, J
    Pozina, G
    Sernelius, BE
    Holtz, PO
    Amano, H
    Akasaki, I
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 (16):
  • [2] Mechanism for radiative recombination in In0.15Ga0.85N/GaN multiple quantum well structures
    Monemar, B
    Bergman, JP
    Dalfors, J
    Pozina, G
    Sernelius, BE
    Holtz, PO
    Amano, H
    Akasaki, I
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 : art. no. - G2.5
  • [3] Mechanism for radiative recombination in In0.15Ga0.85N/GaN multi quantum well structures
    Monemar, B
    Bergman, JP
    Dalfors, J
    Holtz, PO
    Amano, H
    Akasaki, I
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 665 - 668
  • [4] Carrier and exciton dynamics in In0.15Ga0.85N/GaN multiple quantum well structures
    Monemar, B
    Bergman, JP
    Pozina, G
    Dalfors, J
    Sernelius, BE
    Holtz, PO
    Amano, H
    Akasaki, I
    ULTRAFAST PHENOMENA IN SEMICONDUCTORS III, 1999, 3624 : 168 - 178
  • [5] Photoluminescence investigation of In0.15Ga0.85N/GaN multiple quantum wells
    Lee, CM
    Choi, SH
    Kim, CS
    Noh, SK
    Lee, JI
    Lim, KY
    Han, IK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 (02) : L243 - L247
  • [6] Pressure dependence of optical transitions in In0.15Ga0.85N/GaN multiple quantum wells
    Shan, W
    Ager, JW
    Walukiewicz, W
    Haller, EE
    McCluskey, MD
    Johnson, NM
    Bour, DP
    PHYSICAL REVIEW B, 1998, 58 (16) : R10191 - R10194
  • [7] Numerical Study of In0.15Ga0.85N/GaN MQW Solar Cells with varying well band structure
    Wang, Hsun-Wen
    Hsieh, Chi-Chang
    Lai, Fang-, I
    Lin, Shiuan-Huei
    Kuo, Hao-Chung
    2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2013, : 2136 - 2138
  • [8] Silicon doping effect on the optical properties of In0.15Ga0.85N/In0.15Ga0.985N quantum wells
    Ryu, MY
    Yu, YJ
    Shin, EJ
    Yu, PW
    Lee, JI
    Yu, SK
    Oh, ES
    Nam, OH
    Sone, CS
    Park, YJ
    SOLID STATE COMMUNICATIONS, 2000, 116 (12) : 675 - 678
  • [9] Effects of Si-doping in the barriers on the recombination dynamics in In0.15Ga0.85N/In0.015Ga0.985N quantum wells
    Ryu, MY
    Yu, PW
    Shin, EJ
    Lee, JI
    Yu, SK
    Oh, E
    Nam, OH
    Sone, CS
    Park, YJ
    JOURNAL OF APPLIED PHYSICS, 2001, 89 (01) : 634 - 637
  • [10] PHOTOLUMINESCENCE INVESTIGATIONS OF IN0.15GA0.85AS/GAAS AND IN0.15GA0.85AS/ALGAAS QUANTUM WELL STRUCTURES
    LAIHO, R
    ACTA POLYTECHNICA SCANDINAVICA-ELECTRICAL ENGINEERING SERIES, 1989, (64): : 165 - 172