Comparison of the spatial variation in the barrier height of Si and GaAs schottky diodes as measured by ballistic electron emission microscopy

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[31]   A ballistic electron emission microscopy study of barrier height inhomogeneities introduced in Au/III-V semiconductor Schottky barrier contacts by chemical pretreatments [J].
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Goubert, L ;
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Cardon, F ;
Van Daele, P .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (09) :871-877
[32]   Schottky barrier inhomogeneity at Au/Si(111) interfaces investigated using ultrahigh-vacuum ballistic electron emission microscopy [J].
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Miura, T ;
Fujinuma, H ;
Tanaka, S .
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[33]   ELECTRON-EMISSION FROM GAAS SCHOTTKY DIODES [J].
TSUKAMOTO, T ;
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OKUNUKI, M .
INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (99) :65-68
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McDermott, BT ;
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COSTA, JC ;
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[40]   Benchmarking β-Ga2O3 Schottky Diodes by Nanoscale Ballistic Electron Emission Microscopy [J].
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