ORIGIN OF A BAND GAP IN AMORPHOUS Si.

被引：0
|
作者：
Morgan, G.J. [1 ]
Hickey, B.J. [1 ]
Mayou, D. [1 ]
Pasturel, A. [1 ]
机构：
[1] Univ of Leeds, Leeds, Engl, Univ of Leeds, Leeds, Engl
来源：
| 1986年 / 13卷 / pt 2期
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摘要：
SILICON AND ALLOYS
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页码：497 / 500
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