Millimeter-wave AlGaAs-GaAs HBT power operation

被引：5

作者：

Wang, Nan-Lei ^{[1
]}

Ho, Wu-Jing ^{[1
]}

Higgins, J.A. ^{[1
]}

机构：

[1] Rockwell International Science Center, 1049 Camino Dos Rios, Thousand Oaks. CA 91360, United States

来源：

IEEE Microwave and Guided Wave Letters | 1992年 / 2卷 / 10期

关键词：

Computer simulation - Heterojunctions - Microwave measurement - Millimeter waves;

D O I：

10.1109/75.160119

中图分类号：

学科分类号：

摘要：

The AlGaAs-GaAs HBT has demonstrated good power performance up to 18 GHz. Although fmax is typically above 100 GHz, the power performance limitation and large signal operation at millimeter wave frequencies have not been studied. Power results from two HBT structures at 35 GHz are analyzed based on numerical simulation. The HBT demonstrated 8.5-dB linear power gain, 30% PAE with 7.8-dB gain and 7.5-V Vce bias. The power density reaches 1.25 mW/μm2. A shorter collector (0.4 μm) is shown to be better suited for 35-GHz operation as a result of shorter collector transit time and smaller residual collector voltage. Improvement can be achieved by reducing the base and collector resistance, and the collector capacitance.

引用

页码：397 / 399