INFLUENCE OF AMORPHIZATION ON THE DISTRUBITUON OF BORON INTRODUCED INTO SILICON.

被引：0
|
作者：
Pistryak, V.M.
Tetel'baum, D.I.
Kozlov, V.F.
Vasil'ev, V.K.
Zorin, E.I.
Pavlov, P.V.
Fogel, Ya.M.
机构：
来源：
Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov) | 1974年 / 7卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The secondary ion - ion emission method was used in an investigation of the influence of a preliminary amorphization and subsequent annealing on the profile of boron implanted in silicon. The energy of boron ions was 100 keV. The preliminary amorphization was the result of bombardment with neon ions of 200 keV energy and 1000 mu C/cm**2 dose. Boron was implanted (500 mu C/cm**2) after a preliminary amorphization amd then silicon was annealed at temperatures below 550 degree C. The boron distribution profile was found to be narrower than in crystalline samples. When annealing was carried out at higher temperatures, the boron profile broadened considerably in the samples made amorphous by bombardment with neon ions. A significant broadening of the boron profile as a result of such annealing was not observed for crystalline samples which received similar boron doses. When the implanted boron dose was raised to 3000 mu C/cm**2, the boron profile broadened after annealing at temperatures above 600 degree C even in the samples which were not subjected to a preliminary amorphization. The observed behavior could be explained by an acceleration of the diffusion of boron as a result of formation of a large number of vacancies in the course of crystallization of an amorphous layer.
引用
收藏
页码：1325 / 1327
相关论文
共 50 条
  • [1] INFLUENCE OF AMORPHIZATION ON DISTRIBUTION OF BORON INTRODUCED INTO SILICON BY ION-BOMBARDMENT
    PISTRYAK, VM
    TETELBAUM, DI
    KOZLOV, VF
    VASILEV, VK
    ZORIN, EI
    PAVLOV, PV
    FOGEL, YM
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (10): : 1325 - 1327
  • [2] INFLUENCE OF NUCLEATION ON THE KINETICS OF BORON PRECIPITATION IN SILICON.
    Landi, E.
    Guimaraes, S.
    Solmi, S.
    Applied physics. A, Solids and surfaces, 1987, A44 (02): : 135 - 141
  • [3] Mechanism of the Diffusion of Boron in Silicon.
    Panteleev, V.A.
    Okulich, V.I.
    Vasin, A.S.
    Gusarov, V.A.
    Neorganiceskie materialy, 1985, 21 (08): : 1253 - 1255
  • [4] ENHANCED DIFFUSION IN BORON IMPLANTED SILICON.
    Hopkins, L.C.
    Seidel, T.E.
    Williams, J.S.
    Bean, J.C.
    1985, (132)
  • [5] STUDY ON PROFILES OF BORON IMPLANTED IN SILICON.
    Li Guohui
    Wang Xingmin
    Lu Zhiheng
    Zhang Tonghe
    Tian Shuyun
    1983, (04):
  • [6] SHALLOW BORON-DOPED JUNCTIONS IN SILICON.
    Cohen, S.S.
    Norton, J.F.
    Koch, E.F.
    Weisel, G.J.
    Journal of Applied Physics, 1985, 57 (04): : 1200 - 1213
  • [7] EMPIRICAL MODELING OF LOW ENERGY BORON IMPLANTS IN SILICON.
    Simard-Normandin, M.
    Slaby, C.
    1600, (132):
  • [8] CLUSTER CALCULATION OF THE ELECTRONIC STRUCTURE OF BORON IMPURITIES IN SILICON.
    Bunin, M.A.
    Matveev, Yu.A.
    Petrov, N.A.
    Sukhetskii, Yu.V.
    1600, (17):
  • [9] PHOTOLUMINESCENCE FROM CHROMIUM-BORON PAIRS IN SILICON.
    Conzelmann, H.
    Weber, J.
    Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 116 B&C (1-3): : 291 - 296
  • [10] NUCLEAR REACTION ANALYSIS OF SHALLOW BORON IMPLANTS IN SILICON.
    Queen's Univ, Kingston, Ont, Can, Queen's Univ, Kingston, Ont, Can
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1986, B16 (06) : 479 - 482
12345