FURTHER INVESTIGATION OF RF GAIN DEGRADATION IN HIGH-POWER MICROWAVE TRANSISTORS UNDER MULTICARRIER OPERATION.

被引:0
|
作者
Gibson, M.H.
Pollacsek, M.
Strijk, S.
机构
来源
| 1600年 / 02期
关键词
713 Electronic Circuits - 714 Electronic Components and Tubes;
D O I
暂无
中图分类号
学科分类号
摘要
1
引用
收藏
相关论文
共 50 条
  • [1] FURTHER INVESTIGATION OF RF GAIN DEGRADATION IN HIGH-POWER MICROWAVE TRANSISTORS UNDER MULTICARRIER OPERATION
    GIBSON, MH
    POLLACSEK, M
    STRIJK, S
    ESA JOURNAL-EUROPEAN SPACE AGENCY, 1978, 2 (03): : 207 - 213
  • [2] Multiphysics Modeling of RF and Microwave High-Power Transistors
    Aaen, Peter H.
    Wood, John
    Bridges, Daren
    Zhang, Lei
    Johnson, Eric
    Pla, Jaime A.
    Barbieri, Travis
    Snowden, Christopher M.
    Everett, John P.
    Kearney, Michael J.
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (12) : 4013 - 4023
  • [3] Measure gain of power RF/microwave transistors
    Gorbachov, O
    MICROWAVES & RF, 2000, 39 (11) : 117 - +
  • [4] High-Power Multicarrier Generation for RF Breakdown Testing
    Monerris Belda, Oscar
    Diaz Caballero, Elena
    Boria, Vicente E.
    Gimeno, Benito
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 64 (02) : 556 - 563
  • [5] Vacuum transistors with high-power operation
    Matthew Parker
    Nature Electronics, 2020, 3 : 730 - 730
  • [6] Vacuum transistors with high-power operation
    Parker, Matthew
    NATURE ELECTRONICS, 2020, 3 (12) : 730 - 730
  • [7] RF POWER TRANSISTORS CATAPULT INTO HIGH-POWER SYSTEMS
    DYE, NE
    SCHNELL, D
    MICROWAVES & RF, 1987, 26 (03) : 344 - 351
  • [8] ABNORMAL CONDITIONS IN HIGH-POWER TURBOGENERATOR DESIGN AND OPERATION.
    Glebov, I.A.
    Danielevich, Ya.B.
    Mamikonyants, L.G.
    Khutoretskii, G.M.
    Electric Technology, USSR, 1983, (04): : 54 - 64
  • [9] MICROWAVE OPERATION OF HIGH-POWER INGAP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
    MACK, MP
    BAYRAKTAROGLU, B
    KEHIAS, L
    BARRETTE, J
    NEIDHARD, R
    FITCH, R
    SCHERER, R
    DAVITO, D
    WEST, W
    ELECTRONICS LETTERS, 1993, 29 (12) : 1068 - 1069
  • [10] MAXIMUM AVAILABLE POWER GAIN OF MICROWAVE-TRANSISTOR AMPLIFIER UNDER LARGE-SIGNAL OPERATION.
    Umeda, Hiroyuki
    Takahashi, Kenichiro
    Shiraga, Yoshiaki
    Electronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi), 1988, 71 (02): : 40 - 52