Physico-Chemical Investigation of Boron-Containing Films Derived by Hydrolysis of Tetraethoxysilane.

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Strizhkov, B.V.
Vikhlyantsev, O.F.
Pelipas, V.P.
Beskova, E.S.
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Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy | 1976年 / 12卷 / 03期
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On the basis of a study of the mechanism of formation of borosilicate films derived from solution by hydrolysis of tetraethoxysilane in the presence of H//3BO//3, it is shown that the ratio of boron atoms to silicon atoms in the films differs considerably from their ratio in the initial solution. The special features of the diffusion of boron into silicon from films derived from solution are revealed, as well as the relation between these features and the film structure.
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页码:388 / 391
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