Investigation of reactive-ion-etch-induced damage of InP/InGaAs multiple quantum wells by photoluminescence

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[1] Steffensen, O.M.
[2] Birkedal, D.
[3] Hanberg, J.
[4] Albrektsen, O.
[5] Pang, S.W.
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Steffensen, O.M. | 1600年 / American Inst of Physics, Woodbury, NY, United States卷 / 78期
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