Investigation of an InGaP/GaAs resonant-tunneling transistor (RTT)

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作者：

Department of Electrical Engineering, Natl. Cheng-Kung Univ., 1 Univ. R., Tainan, Taiwan ^{[1
]}

不详 ^{[2
]}

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来源：

Solid-State Electron. | / 4卷 / 755-760期

关键词：

Electric resistance - Electron tunneling - Semiconducting gallium arsenide - Semiconducting indium compounds - Semiconductor junctions - Semiconductor superlattices;

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摘要：

A new InGaP/GaAs resonant-tunneling transistor (RTT) has been fabricated successfully and demonstrated. A 5-period InGaP/GaAs superlattice is used as a confinement barrier for holes and an RT route for electrons. A transistor action with a common-emitter current gain up to 220 and an offset voltage of 85 mV are obtained. Due to the RT effect within the 5-period superlattice near the emitter-base p-n junction region, the N-shaped negative-differential-resistance (NDR) phenomena are observed at room temperature. Furthermore, the N-shaped NDR is found both in the saturation and forward-active region. The widely operating regime of NDR may provide the potential for practical applications.

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