共 50 条
- [4] ANODIC OXIDE COMPOSITION AND HG DEPLETION AT THE OXIDE-SEMICONDUCTOR INTERFACE OF HG1-XCDXTE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03): : 472 - 476
- [5] Effect of Ionized Intrinsic Point Defects on the Carrier Concentration in Hg1 - xCdxTe. Izvestiya Akademii Nauk SSSR, Neorganicheskie Materialy, 1976, 12 (05): : 830 - 834
- [8] THERMAL STABILITY OF Hg1 - xCdxTe CRYSTALS COVERED WITH THE ANODIC OXIDE FILMS. Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes, 1986, 25 (12): : 1862 - 1864
- [9] PROBLEM OF THE ANOMALIES OF THE LOW-TEMPERATURE TRANSPORT COEFFICIENTS OF Hg1 minus xCdxTe. Soviet physics. Semiconductors, 1984, 18 (02): : 125 - 128
- [10] OXIDE AND INTERFACE PROPERTIES OF ANODIC FILMS ON HG1-XCDXTE JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1067 - 1073