Differences between the interfaces of InGaAs/GaAs and GaAs/InGaAs in superlattices

被引：0
|
作者：
Natl. Res. Ctr. Optoelectron. T., Institute of Semiconductors, Academia Sinica, Beijing 100083, China [1 ]
不详 [2 ]
不详 [3 ]
机构：
来源：
Wuli Xuebao | / 9卷 / 1815-1816期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [11] MAGNETOCONDUCTANCE OSCILLATIONS IN INGAAS/GAAS LATERAL SURFACE SUPERLATTICES
    MA, J
    PUECHNER, RA
    LIU, WP
    MEZENNER, R
    KRIMAN, AM
    MARACAS, GN
    FERRY, DK
    CHU, P
    WIEDER, HH
    FIRST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS FOR ADVANCED ELECTRONIC AND OPTICAL DEVICES, 1989, 1144 : 619 - 625
  • [12] In situ etching at InGaAs/GaAs quantum well interfaces
    Chirlias, E
    Massies, J
    Marcadet, X
    Guyaux, JL
    Grattepain, C
    JOURNAL OF CRYSTAL GROWTH, 2001, 222 (03) : 471 - 476
  • [13] PRINCIPLE DIFFERENCES BETWEEN THE TRANSPORT-PROPERTIES OF NORMAL ALGAAS/INGAAS/GAAS AND INVERTED GAAS/INGAAS/ALGAAS MODULATION DOPED HETEROSTRUCTURES
    SCHWEIZER, T
    KOHLER, K
    GANSER, P
    APPLIED PHYSICS LETTERS, 1992, 60 (04) : 469 - 471
  • [14] 2 SELECTIVE ETCHING SOLUTIONS FOR GAAS ON INGAAS AND GAAS/ALGAAS ON INGAAS
    HILL, DG
    LEAR, KL
    HARRIS, JS
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (09) : 2912 - 2914
  • [15] CHARACTERISTICS OF DISLOCATIONS AT STRAINED HETEROEPITAXIAL INGAAS/GAAS INTERFACES
    CHANG, KH
    BHATTACHARYA, PK
    GIBALA, R
    JOURNAL OF APPLIED PHYSICS, 1989, 66 (07) : 2993 - 2998
  • [16] STRUCTURAL CHARACTERIZATION OF INGAAS/GAAS SUPERLATTICES GROWN ON MISORIENTED SUBSTRATES
    MAIGNE, P
    ROTH, AP
    JOURNAL OF CRYSTAL GROWTH, 1992, 118 (1-2) : 117 - 124
  • [17] DESIGN AND CHARACTERIZATION OF (111)B INGAAS/GAAS PIEZOELECTRIC SUPERLATTICES
    SANCHEZROJAS, JL
    SACEDON, A
    SANZHERVAS, A
    CALLEJA, E
    MUNOZ, E
    ABRIL, EJ
    AGUILAR, M
    LOPEZ, M
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1995, 10 (08) : 1173 - 1176
  • [18] Oval defects in the MBE grown AlGaAs/InGaAs/GaAs and InGaAs GaAs structures
    Klima, K
    Kaniewska, M
    Reginski, K
    Kaniewski, J
    CRYSTAL RESEARCH AND TECHNOLOGY, 1999, 34 (5-6) : 683 - 687
  • [19] DISLOCATION REDUCTION IN GAAS ON SI BY THERMAL CYCLES AND INGAAS/GAAS STRAINED-LAYER SUPERLATTICES
    OKAMOTO, H
    WATANABE, Y
    KADOTA, Y
    OHMACHI, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (12): : L1950 - L1952
  • [20] GROWTH OF INGAAS/GAAS HETEROSTRUCTURES WITH ABRUPT INTERFACES ON THE MONOLAYER SCALE
    GERARD, JM
    D'ANTERROCHES, C
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 467 - 472
12345