Hole accumulation in SiO2/Si3N4/SiO2 capacitors prior to dielectric breakdown

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作者：

机构：

[1] Sawachi, Masao

[2] Nishioka, Yasushiro

来源：

Sawachi, Masao | 1820年 / JJAP, Minato-ku, Japan卷 / 33期

关键词：

Chemical vapor deposition - Diffusion - Electric breakdown - Electric currents - Electrons - Interfaces (materials) - Transmission electron microscopy;

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摘要：

Supporting evidence for the time-dependent dielectric breakdown (TDDB) of an SiO2/Si3N4/SiO2 (ONO) capacitor due to hole accumulation has been obtained: 1) the gate current of the ONO capacitor during constant voltage stress continues to increase prior to dielectric breakdown, 2) after stress with a positive gate bias, the midgap voltage shifts toward the negative voltage direction, and 3) the time-to-breakdown is inversely proportional to the gate current. These suggest that holes injected from the anode accumulate in the vicinity of the Si3N4/SiO2 interface near the cathode, which cause the breakdown of ONO capacitors.

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