MBE GROWTH OF HIGH-QUALITY InP USING TRIETHYLINDIUM AS AN INDIUM SOURCE.

被引：0

作者：

Kawaguchi, Yoshihiro ^{[1
]}

Asahi, Hajime ^{[1
]}

Nagai, Haruo ^{[1
]}

机构：

[1] NTT, Atsugi Electrical Communication, Lab, Atsugi, Jpn, NTT, Atsugi Electrical Communication Lab, Atsugi, Jpn

来源：

| 1600年 / 23期

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D O I：

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学科分类号：

摘要：

SEMICONDUCTING INDIUM COMPOUNDS

引用

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[1] MBE GROWTH OF HIGH-QUALITY INP USING TRIETHYLINDIUM AS AN INDIUM SOURCE
KAWAGUCHI, Y
ASAHI, H
NAGAI, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (09): : L737 - L739
[2] GAS SOURCE MBE GROWTH OF HIGH-QUALITY INP USING TRIETHYLINDIUM AND PHOSPHINE
KAWAGUCHI, Y
ASAHI, H
NAGAI, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (04): : L221 - L223
[3] MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Heinrich-Hertz-Inst fuer, Nachrichtentechnik Berlin GmbH, Berlin, Germany
J Cryst Growth, pt 2 (940-944):
[4] MBE growth of high-quality InP for GaInAs/InP heterostructures using incongruent evaporation of GaP
Kunzel, H
Bottcher, J
Harde, P
Maessen, R
JOURNAL OF CRYSTAL GROWTH, 1997, 175 : 940 - 944
[5] MBE GROWTH OF HIGH-QUALITY GAAS USING TRIETHYLGALLIUM AS A GALLIUM SOURCE
KONDO, K
ISHIKAWA, H
SASA, S
SUGIYAMA, Y
HIYAMIZU, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (01): : L52 - L53
[6] MBE GROWTH OF HIGH-QUALITY GAAS
CHAND, N
JOURNAL OF CRYSTAL GROWTH, 1989, 97 (02) : 415 - 429
[7] Growth of high-quality GaAs by MBE
Chand, Naresh
Defence Science Journal, 1989, 39 (04) : 335 - 352
[8] MBE growth of high-quality GaAs
Chand, Naresh, 1600, (97):
[9] HIGH-QUALITY INP AND IN1-XGAXASYP1-Y GROWN BY GAS SOURCE MBE
LAMBERT, M
GOLDSTEIN, L
PERALES, A
GABORIT, F
STARCK, C
LIEVIN, JL
JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) : 495 - 501
[10] GROWTH OF HIGH-QUALITY GE MBE FILM
OTA, Y
JOURNAL OF CRYSTAL GROWTH, 1983, 61 (03) : 431 - 438

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