Epitaxial TiN(001) Grown and Analyzed in situ by XPS and UPS. II. Analysis of Ar+ Sputter Etched Layers

被引：19

作者：

Haasch, R.T. ^{[1
]}

Lee, T. -Y. ^{[1
]}

Gall, D. ^{[1
]}

Greene, J.E. ^{[1
]}

Petrov, I. ^{[1
]}

机构：

[1] Center for Microanalysis of Materials, Frederick Seitz Materials Research Laboratory, Materials Science Department, University of Illinois at Urbana-Champaign, Urbana, 61801, IL

来源：

Surface Science Spectra | 2000年 / 7卷 / 03期

关键词：

Rutherford backscattering spectroscopy - X ray photoelectron spectroscopy - Magnesia - Nitrogen removal;

D O I：

10.1116/1.1367596

中图分类号：

学科分类号：

摘要：

X-ray and ultraviolet photoelectron spectroscopies (XPS and UPS) were used to study epitaxial TiN(001) layers grown in situ which were Ar+ sputter etched. The films were deposited on MgO(001) at 850 °C in pure N2 discharges maintained at a pressure of 5 mTorr (0.67 Pa) and shown to have a N/Ti ratio of 1.02 ± 0.02 by Rutherford backscattering spectroscopy (RBS). The films were sputter etched with 3 keV Ar+ at an angle of 40° to a constant nitrogen-to-titanium ratio. A Mg Kα x-ray source was used to obtain the XPS data, while the UPS data was generated by He I and He II radiation. The sputter etched films were found to have a N/Ti ratio of 0.73, indicating a preferential removal of nitrogen. © 2000 American Vacuum Society.

引用

页码：204 / 212

页数：8