Low carbon incorporation in metalorganic molecular beam epitaxy of GaAs using dimethylamine gallane

被引:0
|
作者
机构
[1] Ishikura, Kouji
[2] Hayashi, Ken-ichi
[3] Ogawa, Tomokazu
[4] Hasegawa, Fumio
来源
Ishikura, Kouji | 1600年 / 32期
关键词
14;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [31] LOW-TEMPERATURE GROWTH OF HEAVILY CARBON-DOPED GAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY WITH ELEMENTAL GALLIUM
    NAGAO, K
    SHIRAKASHI, J
    KONAGAI, M
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11): : 6090 - 6094
  • [32] Metalorganic molecular beam epitaxy of AlGaAs using APAH
    Konig, Frank
    Morsch, Georg
    Kamp, Markus
    Luth, Hans
    Hostalek, Martin
    Pohl, Ludwig
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (10): : 4425 - 4429
  • [33] GROWTH AND CHARACTERIZATION OF GAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLGALLIUM AND ARSENIC
    TU, CW
    LIANG, BW
    CHIN, TP
    ZHANG, J
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 293 - 296
  • [34] METALORGANIC MOLECULAR-BEAM EPITAXY GROWTH-CHARACTERISTICS OF GAAS USING TRIETHYLGALLIUM AND TRISDIMETHYLAMINOARSENIC
    LIU, XF
    ASAHI, H
    INOUE, K
    MARX, D
    ASAMI, K
    MIKI, K
    GONDA, S
    JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) : 1952 - 1958
  • [35] GROWTH OF GAAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIS-DIMETHYLAMINOARSENIC
    ABERNATHY, CR
    WISK, PW
    BOHLING, DA
    MUHR, GT
    APPLIED PHYSICS LETTERS, 1992, 60 (19) : 2421 - 2423
  • [36] LOW-CARBON INCORPORATION IN GAAS GROWN BY CHEMICAL BEAM EPITAXY USING UNPRECRACKED ARSINE, TRIMETHYLGALLIUM AND TRIETHYLGALLIUM
    PARK, SJ
    RO, JR
    SIM, JK
    LEE, EH
    JOURNAL OF CRYSTAL GROWTH, 1994, 136 (1-4) : 143 - 147
  • [37] Silicon incorporation behaviour in GaAs grown on GaAs (111)A by molecular beam epitaxy
    Sato, K
    Fahy, MR
    Ashwin, MJ
    Joyce, BA
    JOURNAL OF CRYSTAL GROWTH, 1996, 165 (04) : 345 - 350
  • [38] LOW-TEMPERATURE ETCHING OF GAAS SUBSTRATES AND IMPROVED MORPHOLOGY OF GAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRISDIMETHYLAMINOARSENIC AND TRIETHYLGALLIUM
    MARX, D
    ASAHI, H
    LIU, XF
    HIGASHIWAKI, M
    VILLAFLOR, AB
    MIKI, K
    YAMAMOTO, K
    GONDO, S
    SHIMOMURA, S
    HIYAMIZU, S
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 551 - 556
  • [39] Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy
    Cheah, WK
    Fan, WJ
    Yoon, SF
    Ng, TK
    Loke, WK
    Zhang, DH
    Mei, T
    Liu, R
    Wee, ATS
    JOURNAL OF CRYSTAL GROWTH, 2005, 275 (3-4) : 440 - 447
  • [40] Carbon diffusion behavior in a GaAs tunnel junction with a heavily carbon doped p(+)-layer by metalorganic molecular beam epitaxy
    Oh, JH
    Hayakawa, N
    Konagai, M
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10): : 6300 - 6301