共 50 条
- [31] LOW-TEMPERATURE GROWTH OF HEAVILY CARBON-DOPED GAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY WITH ELEMENTAL GALLIUM JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (11): : 6090 - 6094
- [32] Metalorganic molecular beam epitaxy of AlGaAs using APAH Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1993, 32 (10): : 4425 - 4429
- [33] GROWTH AND CHARACTERIZATION OF GAAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIMETHYLGALLIUM AND ARSENIC JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1990, 8 (02): : 293 - 296
- [40] Carbon diffusion behavior in a GaAs tunnel junction with a heavily carbon doped p(+)-layer by metalorganic molecular beam epitaxy JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (10): : 6300 - 6301