Diamond-like carbon thin film formation by ion-beam-assisted deposition

被引:0
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作者
Funada, Yoshinori [1 ]
Awazu, Kaoru [1 ]
Shimamura, Kisaburo [1 ]
Watanabe, Hiroshi [1 ]
Iwaki, Masaya [1 ]
机构
[1] Industrial Research Inst of Ishikawa, Ishikawa, Japan
关键词
Adhesion - Carbon - Deposition - Hardness - Ion beams - Ionization - Raman spectroscopy - Silicon - Steel - Structure (composition) - Thin films - Tungsten carbide;
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摘要
A study has been made of the formation of diamond-like carbon (DLC) thin films on tungsten carbide (WC), high speed steel (SKH) and silicon (Si) wafer by ion-beam-assisted deposition (IBAD). Carbon targets were sputtered by electron beams and the carbon particles were deposited on tool specimens of WC and SKH and on Si wafer. At the same time ion beams were irradiated on the specimens during carbon coating. The ion beams were produced by plasma ionization with a microwave method and were accelerated. The acceleration voltage was 20 or 35 kV and the total dose density was approximately 1 × 1017 ions cm-2. The carbon films on their specimens were analysed for structure by Raman spectroscopy, and adhesion and hardness tests were carried out. The IBAD carbon films were similar to diamond-like carbon films prepared by ion plating in terms of their structure and Knoop hardness. Adhesive DLC films were formed by IBAD. It was concluded that IBAD is useful for improving the adhesion of the carbon film to the substrate.
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页码:514 / 518
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