Calculation of electronic states of the CdTe(110) relaxed surface

被引：0
作者：
Jia, Yu
Fan, Xiqing
Ma, Bingxian
机构：
来源：
Wuli Xuebao/Acta Physica Sinica | 1997年 / 46卷 / 10期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1999 / 2006
相关论文
共 50 条
[41]   ATOMIC GEOMETRY AND ELECTRONIC-STRUCTURE OF CDTE(110) [J].
WANG, YR ;
DUKE, CB ;
MAGNUSSON, KO ;
FLODSTROM, SA .
SURFACE SCIENCE, 1988, 205 (1-2) :L760-L770
[42]   ELECTRONIC-PROPERTIES OF CLEAVED CDTE(110) SURFACES [J].
ORLOWSKI, BA ;
LACHARME, JP ;
BENSALAH, S ;
SEBENNE, CA .
SURFACE SCIENCE, 1988, 200 (01) :L460-L464
[43]   Lifetimes of electronic excitations in unoccupied surface states and the image potential states on Pd(110) [J].
Tsirkin, S. S. ;
Eremeev, S. V. ;
Chulkov, E. V. .
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS, 2012, 115 (04) :673-680
[44]   Lifetimes of electronic excitations in unoccupied surface states and the image potential states on Pd(110) [J].
S. S. Tsirkin ;
S. V. Eremeev ;
E. V. Chulkov .
Journal of Experimental and Theoretical Physics, 2012, 115 :673-680
[45]   SELF-CONSISTENT CALCULATION OF THE ELECTRONIC-STRUCTURE OF THE AG(110) SURFACE [J].
HO, KM ;
HARMON, BN ;
LIU, SH .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03) :235-235
[46]   ELECTRONIC-STRUCTURE OF IDEAL AND RELAXED INSB(110) SURFACES [J].
SCHMEITS, M ;
MAZUR, A ;
POLLMANN, J .
SOLID STATE COMMUNICATIONS, 1981, 40 (12) :1081-1084
[47]   Cr impurity-induced electronic states in ZnTe(110) surface [J].
Kanazawa, Ken ;
Nishimura, Taku ;
Yoshida, Shoji ;
Shigekawa, Hidemi ;
Kuroda, Shinji .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2015, 54 (08)
[48]   SURFACE AND INTERFACE STATES ON GAAS(110) - EFFECTS OF ATOMIC AND ELECTRONIC REARRANGEMENTS) [J].
SPICER, WE ;
PIANETTA, P ;
LINDAU, I ;
CHYE, PW .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04) :885-893
[49]   BOUND AND RESONANT (110) SURFACE ELECTRONIC STATES FOR GAAS, GAP AND GASB [J].
BERES, RP ;
ALLEN, RE ;
DOW, JD .
SOLID STATE COMMUNICATIONS, 1983, 45 (01) :13-16
[50]   Atomic geometry, electronic states and vibrational properties of the AlAs(110) surface [J].
Tütüncü, HM ;
Srivastava, GP .
SURFACE SCIENCE, 2000, 457 (1-2) :211-218
12345