Epitaxial lateral overgrowth of GaAs by LPE

被引:0
|
作者
Nishinaga, Tatau [1 ]
Nakano, Tsuyoshi [1 ]
Zhang, Suian [1 ]
机构
[1] Univ of Tokyo, Japan
来源
Japanese Journal of Applied Physics, Part 2: Letters | 1988年 / 27 pt 2卷 / 06期
关键词
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [41] EPITAXIAL LATERAL OVERGROWTH OF SI ON NONPLANAR SUBSTRATE
    KINOSHITA, S
    SUZUKI, Y
    NISHINAGA, T
    JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) : 561 - 566
  • [42] Local epitaxy and lateral epitaxial overgrowth of SiC
    Khlebnikov, Y
    Khlebnikov, I
    Parker, M
    Sudarshan, TS
    JOURNAL OF CRYSTAL GROWTH, 2001, 233 (1-2) : 112 - 120
  • [43] Interface supersaturation in epitaxial lateral overgrowth of InP
    Yan, Z
    Naritsuka, S
    Nishinaga, T
    PROCEEDINGS OF THE TWENTY-SEVENTH STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS (SOTAPOCS XXVII), 1997, 97 (21): : 161 - 165
  • [44] Epitaxial lateral overgrowth of GaN on Si (111)
    Feltin, E
    Beaumont, B
    Vennéguès, P
    Vaille, M
    Gibart, P
    Riemann, T
    Christen, J
    Dobos, L
    Pécz, B
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 182 - 185
  • [45] Improvements in epitaxial lateral overgrowth of InP by MOVPE
    Julian, Nick H.
    Mages, Phil A.
    Zhang, Chong
    Bowers, John E.
    JOURNAL OF CRYSTAL GROWTH, 2014, 402 : 234 - 242
  • [46] InAs epitaxial lateral overgrowth of W masks
    Wernersson, LE
    Lind, E
    Lembke, J
    Martinsson, B
    Seifert, W
    JOURNAL OF CRYSTAL GROWTH, 2005, 280 (1-2) : 81 - 86
  • [47] Epitaxial lateral overgrowth of GaN by HVPE and MOVPE
    Zhang, R
    Gu, SL
    Lu, DQ
    Shen, B
    Shi, Y
    Zhang, L
    Kuech, TF
    Boleslawski, MP
    Kuan, TS
    Zheng, YD
    APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 2001, 4580 : 214 - 220
  • [48] Maskless lateral epitaxial overgrowth of GaN on sapphire
    Fini, P
    Marchand, H
    Ibbetson, JP
    Moran, B
    Zhao, L
    Denbaars, SP
    Speck, JS
    Mishra, UK
    WIDE-BANDGAP SEMICONDUCTORS FOR HIGH-POWER, HIGH-FREQUENCY AND HIGH-TEMPERATURE APPLICATIONS-1999, 1999, 572 : 315 - 320
  • [49] GaN epitaxial lateral overgrowth and optical characterization
    Li, X
    Bishop, SG
    Coleman, JJ
    APPLIED PHYSICS LETTERS, 1998, 73 (09) : 1179 - 1181
  • [50] Epitaxial lateral overgrowth of GaN on silicon (111)
    Feltin, E
    Beaumont, B
    Vennéguès, P
    Riemann, T
    Christen, J
    Faurie, JP
    Gibart, P
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2001, 188 (02): : 733 - 737